unisonic technologies co., ltd 10n75 preliminary power mosfet www.unisonic.com.tw 1 of 6 copyright ? 2011 unisonic technologies co., ltd qw-r502-501.b 10 a , 750v n-channel power mosfet ? description the utc 10n75 is a n-channel mode power mosfet using utc?s advanced technology to provide costomers with planar stripe and dmos technology. this technology specialized in allowing a minimum on-state resistance and superior switching performance. it also can withstand high energy pulse in the avalanche and commutation mode. the utc 10n75 is universally applied in high efficiency switch mode power supply, active power faction correction, electronic lamp based on half bridge topology. ? features * r ds(on) =1.3 ? @v gs =10v * high switching speed * improved dv/dt capability * 100% avalanche tested ? symbol 1.gate 3.source 2.drain 1 1 to-220 to-220f 1 to-220f1 ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 10n75l-ta3-t 10n75g-ta3-t to-220 g d s tube 10n75l-tf3-t 10n75g-tf3-t to-220f g d s tube 10N75L-TF1-T 10n75g-tf1-t to-220f1 g d s tube note: pin assignment: g: gate d: drain s: source
10n75 preliminary power mosfet unisonic technologies co., ltd 2 of 6 www.unisonic.com.tw qw-r502-501.b ? absolute maximum ratings (t c =25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 750 v gate-source voltage v gss 30 v drain current continuous i d 10 a pulsed (note 2) i dm 40 a avalanche current (note 2) i ar 10 a avalanche energy single pulsed (note 3) e as 920 mj repetitive (note 2) e ar 24 mj peak diode recovery dv/dt (note 4) dv/dt 4.0 v/ns power dissipation to-220 p d 156 w to-220f/to-220f1 50 w junction temperature t j +150 c storage temperature t stg -55~+150 c note: 1. absolute maximum ratings are those values beyo nd which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. repetitive rating: pulse width lim ited by maximum junction temperature 3. l=17.3mh, i as =10a, v dd = 50v, r g =25 ? , starting t j =25c 4. i sd 10a, di/dt 200a/ s, v dd bv dss , starting t j =25c ? thermal data parameter symbol ratings unit junction to ambient to-220 ja 62.5 c/w to-220f/to-220f1 62.5 c/w junction to case to-220 jc 0.8 c/w to-220f/to-220f1 2.5 c/w
10n75 preliminary power mosfet unisonic technologies co., ltd 3 of 6 www.unisonic.com.tw qw-r502-501.b ? electrical characteristics (t c =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v, i d =250a 750 v breakdown voltage temperature coefficient bv dss / t j i d =250 a,referenced to 25c 0.98 v/c drain-source leakage current i dss v ds =750v, v gs =0v 10 a v ds =640v, t c =125c 100 a gate-source leakage current forward i gss v ds =0v ,v gs =30v 100 na reverse v ds =0v ,v gs =-30v -100 na on characteristics gate threshold voltage v gs ( th ) v ds =v gs , i d =250a 2.0 4.0 v drain-source on-state resistance r ds ( on ) v gs =10v, i d =5a 0.93 1.3 ? forward transconductance g fs v ds =50v, i d =5.0a (note 1) 5.8 s dynamic parameters input capacitance c iss v ds =25v,v gs =0v,f=1.0mhz 2150 2800 pf output capacitance c oss 180 230 pf reverse transfer capacitance c rss 15 20 pf switching parameters total gate charge q g v ds =600v, v gs =10v, i d =10a (note 1, 2) 45 58 nc gate-source charge q gs 13.5 nc gate-drain charge q gd 17 nc turn-on delay time t d ( on ) v dd =350v, i d =10a, r g =25 ? v ds =10v (note 1, 2) 50 110 ns turn-on rise time t r 130 270 ns turn-off delay time t d ( off ) 90 190 ns turn-off fall time t f 80 170 ns source- drain diode ratings and characteristics maximum body-diode continuous current i s 10.0 a maximum body-diode pulsed current i sm 40.0 a drain-source diode forward voltage v sd i s =10.0a, v gs =0v 1.4 v body diode reverse recovery time t r r v gs =0v, i s =10.0a, di f /dt=100a/ s (note 1) 730 ns body diode reverse recovery charge q rr 10.9 c note: 1. pulse test: pulse width 300s, duty cycle 2% 2. essentially independent of operating temperature
10n75 preliminary power mosfet unisonic technologies co., ltd 4 of 6 www.unisonic.com.tw qw-r502-501.b ? test circuits and waveforms same type as d.u.t. l v dd driver v gs r g - v ds d.u.t. + * dv/dt controlled by r g * i sd controlled by pulse period * d.u.t.-device under test - + peak diode recovery dv/dt test circuit p. w. period d= v gs (driver) i sd (d.u.t.) i fm , body diode forward current di/dt i rm body diode reverse current body diode recovery dv/dt body diode forward voltage drop v dd 10v v ds (d.u.t.) v gs = p.w. period peak diode recovery dv/dt waveforms
10n75 preliminary power mosfet www.unisonic.com.tw 5 of 6 copyright ? 2011 unisonic technologies co., ltd qw-r502-501.b ? test circuits and waveforms (cont.) v gs d.u.t. r g 10v v ds r l v dd pulse width 1 s duty factor 0.1% v ds 90% 10% v gs t d(on) t r t d(off) t f switching test circuit switching waveforms 50k ? 0.3 f dut v ds same type as d.u.t. 0.2 f 12v v gs 3ma 10v charge q gs q gd q g v gs gate charge test circuit gate charge waveform v dd t p time bv dss i as i d(t) v ds(t) unclamped inductive switching test circuit unclamped inductive switching waveforms
10n75 preliminary power mosfet unisonic technologies co., ltd 6 of 6 www.unisonic.com.tw qw-r502-501.b utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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